Resistive switching mechanisms of V-doped SrZrO3 memory films
Resistive switching mechanisms of V-doped SrZrO3 memory films
复制标题
DOI：
10.1109/led.2006.880660
复制
发表时间：
2006-09-01
影响因子：
4.9
通讯作者：
Tseng, Tseung-Yuen
中科院分区：
文献类型：
--
作者：
Lin, Chun-Chieh;Tu, Bing-Chung;Tseng, Tseung-Yuen
本文研究了溅射法制备的V掺杂SrZrO_3（V：SZO）存储薄膜的阻变特性。存储器膜的电流状态在高电流状态（H状态）和低电流状态（L状态）之间切换。在读取电压下，两个电流状态的电阻比超过1000。从L-到H-状态的切换机制对应于电流路径的形成。然而，这种从H-到L-状态的机制被认为是由于V：SZO膜中存在的缺陷随机捕获电子，因此电流路径破裂。H态的导电机制以欧姆导电为主，而L态的导电机制以Frenkel-Poole发射为主。电阻转换的极性方向是SrZrO 3氧化物的固有性质。具有高均匀性和良好稳定性的V：SZO薄膜有望用于非易失性存储器。
The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.