Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe
Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe
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DOI：
10.7567/jjap.57.071001
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发表时间：
2018-07-01
影响因子：
1.5
通讯作者：
Kuzuhara, Masaaki
中科院分区：
文献类型：
--
作者：
Tokuda, Hirokuni;Suzuki, Kosuke;Kuzuhara, Masaaki
研究了有意掺入铁 (Fe) 掺杂剂以及无意掺入硅 (Si) 和碳 (C) 掺杂剂的高阻 GaN 衬底中的电子浓度。通过二次离子质谱(SIMS)测量，Si、C和Fe原子浓度分别为2×10(17)、1×10(16)和1×10(19)cm(-3)。电流-电压 (I-V) 特性的温度依赖性表明，电阻率 (rho) 在 300K 时为 3.8 x 10(9)Omega cm，在 570 K 时单调下降至 3.1 x 10(4)Omega cm，活化能为 0.63 eV。使用分析方程对电子浓度 (n) 进行建模，假设 Si 供体、C 和 Fe 受体的三个杂质水平。基于该模型推导出300 K和570 K下的n分别为5.0 x 10(7)和3.1 x 10(12) cm(-3)，有效活化能为0.60 eV。这些计算的电子浓度值与实验结果非常吻合。此外，定量分析结果表明，通过将Fe的掺杂浓度从1.0 x 10(18) cm(-3)增加到1.0 x 10(20) cm(-3)，预计n可减少约2个数量级。 (C) 2018 日本应用物理学会。
Electron concentration in highly resistive GaN substrates with intentional iron (Fe) dopants as well as unintentionally incorporated silicon (Si) and carbon (C) dopants has been investigated. Si, C, and Fe atomic concentrations were 2 x 10(17), 1 x 10(16), and 1 x 10(19)cm(-3), respectively as measured by secondary ion mass spectroscopy (SIMS). Temperature dependence of current-voltage (I-V) characteristics revealed that the resistivity (rho) was 3.8 x 10(9)Omega cm at 300K and monotonously decreased to 3.1 x 10(4)Omega cm at 570 K, giving an activation energy of 0.63 eV. Electron concentration (n) was modeled using analytical equation assuming three impurity levels of Si donor, C and Fe acceptors. The n of 5.0 x 10(7) and 3.1 x 10(12) cm(-3) at 300 and 570 K, respectively, with an effective activation energy of 0.60 eV, were derived based on the model. These calculated electron concentration values are in good agreement with the experimental results. In addition, quantitatively analyzed results revealed that around 2 orders of magnitude reduction of n is expected by increasing doping concentration of Fe from 1.0 x 10(18) to 1.0 x 10(20) cm(-3). (C) 2018 The Japan Society of Applied Physics.