Quantum dot superlattice thermoelectric materials and devices
Quantum dot superlattice thermoelectric materials and devices
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DOI：
10.1126/science.1072886
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发表时间：
2002-09-27
期刊：
影响因子：
56.9
通讯作者：
LaForge, BE
中科院分区：
文献类型：
--
作者：
Harman, TC;Taylor, PJ;LaForge, BE
研究了分子束外延生长的PbSeTe基量子点超晶格结构在热电材料中的应用。我们在单腿热电器件测试装置中使用n型膜证明了相对于常规块状（Bi，Sb）（2）（Se，Te）（3）热电材料的改进的冷却值，其将冷结冷却43.7 K，低于室温热结温度299.7 K。典型的器件由无衬底的块状（通常厚度为0.1毫米，宽度为10毫米，长度为5毫米）纳米结构的PbSeTe/PbTe平板作为n型腿和金属线作为p型腿组成。
PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)(2)(Se,Te)(3) thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like ( typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.