Directional growth method to obtain high quality polycrystalline silicon from its melt
Directional growth method to obtain high quality polycrystalline silicon from its melt
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DOI：
10.1016/j.jcrysgro.2006.04.016
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发表时间：
2006-07
影响因子：
1.8
通讯作者：
K. Fujiwara;W. Pan;Kohei Sawada;M. Tokairin;N. Usami;Y. Nose;A. Nomura;T. Shishido;K. Nakajima-K.-Na
中科院分区：
文献类型：
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作者：
K. Fujiwara;W. Pan;Kohei Sawada;M. Tokairin;N. Usami;Y. Nose;A. Nomura;T. Shishido;K. Nakajima-K.-Na
