Potential role of voltage-sensing phosphatases in regulation of cell structure through the production of PI(3,4)P2
Potential role of voltage-sensing phosphatases in regulation of cell structure through the production of PI(3,4)P2
复制标题
电压感应磷酸酶通过产生 PI(3,4)P2 调节细胞结构的潜在作用
DOI:
10.1002/jcp.24463
复制
发表时间:
2013
期刊:
影响因子:
--
通讯作者:
Okamura Y & Homma KJ
中科院分区:
文献类型:
--
作者:
Yamaguchi S;Kurokawa T;Taira I;Aoki N;Sakata S;Okamura Y & Homma KJ
Voltage‐sensing phosphatase, VSP, consists of the transmembrane domain, operating as the voltage sensor, and the cytoplasmic domain with phosphoinositide‐phosphatase activities. The voltage sensor tightly couples with the cytoplasmic phosphatase and membrane depolarization induces dephosphorylation of several species of phosphoinositides. VSP gene is conserved from urochordate to human. There are some diversities among VSP ortholog proteins; range of voltage of voltage sensor motions as well as substrate selectivity. In contrast with recent understandings of biophysical mechanisms of VSPs, little is known about its physiological roles. Here we report that chick ortholog of VSP (designated as Gg‐VSP) induces morphological feature of cell process outgrowths with round cell body in DF‐1 fibroblasts upon its forced expression. Expression of the voltage sensor mutant, Gg‐VSPR153Qwith shifted voltage dependence to a lower voltage led to more frequent changes of cell morphology than the wild‐type protein. Coexpression of PTEN that dephosphorylates PI(3,4)P2suppressed this effect by Gg‐VSP, indicating that the increase of PI(3,4)P2leads to changes of cell shape. In addition, visualization of PI(3,4)P2with the fluorescent protein fused with the TAPP1‐derived pleckstrin homology (PH) domain suggested that Gg‐VSP influenced the distribution of PI(3,4)P2. These findings raise a possibility that one of the VSP's functions could be to regulate cell morphology through voltage‐sensitive tuning of phosphoinositide profile. J. Cell. Physiol. 229: 422–433, 2014. © 2013 Wiley Periodicals, Inc.