GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.
GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.
复制标题
GaInAsP/InP 膜 BH-DFB 激光器直接键合在 SOI 衬底上。
作者：
T. Maruyama;T. Okumura;S. Sakamoto;K. Miura;Y. Nishimoto;S. Arai
采用直接键合在SOI衬底上的GaInAsP/InP膜埋异质结构（BH）分布反馈（DFB）激光器，实现了光泵下的室温连续波工作。在腔长为120 μ m，条宽为2 μ m的条件下，获得了阈值泵浦功率为2.8mW，子模抑制比为28 dB的激光输出。
A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.