Device characterization and modeling for the design of UHF Class-E inverters and synchronous rectifiers
Device characterization and modeling for the design of UHF Class-E inverters and synchronous rectifiers
复制标题
UHF E 类逆变器和同步整流器设计的器件表征和建模
作者：
L. Rizo;M. Ruiz;J. A. Garcia
本文强调了对有源和无源器件进行适当的表征和建模，从而优化设计超高频（UHF） e类逆变器和同步整流器的优势。虽然一对低频和射频测量技术的组合被证明是有效的提取一个简化的模型作为一个开关，一个更复杂的方法可能需要如果也解决设计的连续波（CW）驱动网络或如果有兴趣充分利用其他晶体管的特性。给出了基于GaN hemt和GaAs E-pHEMT的设计实例，并考虑了线圈和电容器的寄生效应。无线传输和供电应用已经解决。
In this paper, the advantages derived from an appropriate characterization and modeling of active and passive devices, leading to the optimized design of Ultra-High Frequency (UHF) Class-E inverters and synchronous rectifiers, are highlighted. While the combination of a couple of low-frequency and RF measurement techniques is shown to be valid for the extraction of a simplified model as a switch, a more complex approach may be required if also addressing the design of the continuous wave (CW) driving network or if interested in taking fully advantage of other transistor characteristics. Design examples, based on GaN HEMTs and a GaAs E-pHEMT, are presented, in which the parasitics of the employed coils and capacitors are also taken into consideration. Wireless transmitting and powering applications have been addressed.