PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION
PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION
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DOI：
10.1103/physrevb.7.2486
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发表时间：
1973-01-01
影响因子：
3.7
通讯作者：
MERRITT, FR
中科院分区：
文献类型：
--
作者：
KUKIMOTO, H;HENRY, CH;MERRITT, FR
GaP p-n结的光电容研究为与O施主相关的深态提供了新的见解。除了众所周知的中性状态，其中O以0.9 eV结合电子，还发现了一种新的状态，其中O深度结合第二个电子。第二个电子被捕获到一个能级为0.45 eV深，之后晶格弛豫增加了平均光电离能为0.20 eV。晶格弛豫的作用是建立通过研究温度依赖性的光电离的捕获电子。通过耗尽层的O施主密度的剖面测量表明，O施主浓度从p侧的1.5× 1016降低到n侧的4× 1014。测量了两种电子的光学截面和热发射率。两个电子在100 ℃以下都是稳定的。
Photocapacitance studies in GaP p− n junctions have given new insight to the deep states associated with the O donor. In addition to the well-known neutral state in which O binds an electron by 0.9 eV, a new state in which O deeply binds a second electron was discovered. The second electron is captured into a level∼ 0.45 eV deep, after which lattice relaxation increases the average optical-ionization energy to∼ 2.0 eV. The role of lattice relaxation was established by studying the temperature dependence of the photoionization of the trapped electrons. Profile measurements of the O-donor density through the depletion layer indicated a decrease in O-donor concentration from 1.5× 10 16 on p to 4× 10 14 on the n side. Optical cross sections and thermal-emission rates of both electrons were measured. Both electrons were stable below 100 C.