Effect of Hydrogen on Electrical Properties of Metal-Ferroelectric (SrBi2Ta2O9)–Insulator (HfTaO)–Silicon Capacitor
Effect of Hydrogen on Electrical Properties of Metal-Ferroelectric (SrBi2Ta2O9)–Insulator (HfTaO)–Silicon Capacitor
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DOI：
10.1109/led.2015.2443151
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发表时间：
2015-06
影响因子：
4.9
通讯作者：
Y. Chen;X. B. Xu;Z. Lei;C. Zeng;X. Liao;Y. En;Y. Huang;W. Fang
中科院分区：
文献类型：
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作者：
Y. Chen;X. B. Xu;Z. Lei;C. Zeng;X. Liao;Y. En;Y. Huang;W. Fang
制备了以SrBi 2 Ta 2 O 9为铁电层、HfTaO为绝缘层的金属-铁电-绝缘体-半导体（MFIS）电容器，研究了氢处理前后的电学性能。MFIS电容器的记忆窗口尺寸严重减小甚至消失。这可能是由于氢离子扩散到铁电层中，导致铁电层矫顽场退化。此外，氢处理后，MFIS的漏电流密度增加了一个数量级，这可能是由于氧空位和氢原子电离产生的电子所致。研究结果可为铁电存储器的设计和应用提供指导。
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with SrBi2Ta2O9 as a ferroelectric layer and HfTaO as an insulator layer were fabricated, and the electrical properties were investigated before and after the hydrogen treatment. The size of memory window for the MFIS capacitors seriously decreases and even vanishes. This could be attributed to the diffusion of hydrogen ions into the ferroelectric layer, which leads to the degradation of coercive field for ferroelectric layer. Moreover, it was found that the leakage current density of the MFIS increases as much as one order of magnitude after the hydrogen treatment, which could be attributed to the electrons produced by the ionized of oxygen vacancy and H atoms. The results could provide useful guidelines for the design and application of ferroelectric memory.