Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications
Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications
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DOI：
10.1063/1.4737158
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发表时间：
2012-07
影响因子：
4
通讯作者：
L. Liu;J. Xu;F. Ji;J. Chen;P. Lai
中科院分区：
文献类型：
--
作者：
L. Liu;J. Xu;F. Ji;J. Chen;P. Lai
制备了以氮化氧化钆（GdO）为电荷存储层（CSL）的电荷俘获存储电容器，研究了淀积后在NH3中退火对其存储特性的影响。透射电子显微镜，x射线光电子能谱，和x射线衍射被用来分析的横截面和界面质量，组合物，和结晶度的堆叠栅极电介质，分别。结果表明，NH3退火使氮化GdO薄膜中产生的大量深能级体陷阱分布合理，并减少了CSL/SiO2界面附近的浅陷阱，从而提高了存储窗口，实现了存储性能之间的良好平衡.
Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.