Spin-dependent hot electron transport in Co/Cu thin films
Spin-dependent hot electron transport in Co/Cu thin films
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Co/Cu 薄膜中自旋相关的热电子传输
DOI：
10.1103/physrevlett.84.971
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发表时间：
2000
影响因子：
8.6
通讯作者：
Buhrman
中科院分区：
文献类型：
--
作者：
Rippard;Buhrman
利用弹道电子显微镜研究了Co/Cu/Co三层薄膜在1.0 ~ 2.0 eV能量范围内的热电子输运。测定了Co的自旋相关衰减长度以及Co/Cu界面上自旋相关隧穿和透射的累积极化效应。对于非常薄的（少数a） Co层，后一种效应导致约1.3 eV以上的弱多数自旋极化电子束和约1.2 eV以下的少数自旋极化电子束。对于较厚的钴层，发射光束总是多数自旋极化。
Hot-electron transport in Co/Cu/Co trilayer films has been studied in the energy range from 1.0 to 2.0 eV using ballistic electron magnetic microscopy. Both the spin-dependent attenuation lengths of Co and the cumulative polarizing effects of spin-dependent tunneling and transmission across a Co/Cu interface have been determined. For very thin (a few A) Co layers, the latter effects result in a weakly majority-spin polarized electron beam above approximately 1.3 eV and a minority-spin polarized beam below approximately 1.2 eV. For thicker Co layers the transmitted beam is always majority-spin polarized.