High-voltage pixel sensors for ATLAS upgrade-猫眼课题宝

DOI：

10.1016/j.nima.2014.06.035

发表时间：

2014-11

期刊：

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment

影响因子：

1.4

通讯作者：

中科院分区：

物理与天体物理3区

文献类型：

作者：

I. Perić;C. Kreidl;P. Fischer;F. Bompard;P. Breugnon;J. Clémens;D. Fougeron;J. Liu;P. Pangaud;A. Rozanov;M. Barbero;S. Feigl;M. Capeans;D. Ferrere;H. Pernegger;B. Ristic;D. Muenstermann;S. Sevilla;A. Rosa;A. Miucci;M. Nessi;G. Iacobucci;M. Backhaus;F. Hügging;H. Krüger;T. Hemperek;T. Obermann;N. Wermes;M. Garcia-Sciveres;A. Quadt;J. Weingarten;M. George;J. Grosse-Knetter;J. Rieger;R. Bates;A. Blue;C. Buttar;D. Hynds

高压（HV-）CMOS像素传感器具有几个良好的特性：通过漂移快速收集电荷，实现相对复杂的CMOS像素内电子器件的可能性以及与商业工艺的兼容性。传感器元件是p型衬底中的深n阱二极管。n阱包含CMOS像素电子器件。主要的电荷收集机制是在浅的高场区域中的漂移，这导致快速的电荷收集和高的辐射耐受性。我们目前正在评估使用180 nm HV-CMOS技术实现的高电压探测器进行高亮度ATLAS升级。我们的方法是用CMOS传感器取代现有的像素和条形传感器，同时保留目前使用的读出ASIC。智能是指传感器识别粒子撞击并生成地址信息的能力。通过这种方式，我们可以受益于HV传感器技术的优点，例如更低的成本、更低的质量、更低的工作电压、更小的间距、在高入射角下更小的簇。此外，我们希望达到ATLAS升级所需的辐射硬度。为了测试这个概念，我们设计了两个HV-CMOS原型，可以通过两种方式读出：使用像素和条带读出芯片。在像素读出的情况下，HV-CMOS传感器和读出ASIC之间的连接可以电容性地建立。

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

High-voltage pixel sensors for ATLAS upgrade

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