Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers
Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers
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DOI：
10.1021/acs.nanolett.0c00522
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发表时间：
2020-04-08
期刊：
影响因子：
10.8
通讯作者：
Dayeh, Shadi A.
中科院分区：
文献类型：
--
作者：
Choi, Woojin;Chen, Renjie;Dayeh, Shadi A.
晶体管是任何电子和电信系统的主干，但所有已知的晶体管本质上都是非线性的，会导致信号失真。在这里，我们展示了一种新型的晶体管，它具有迄今为止最好的线性度，通过使用AlGaN/GaN结构依次打开由一个平面顶栅和几个触发鳍场效应晶体管(FET)组成的多个沟道而实现的。高度线性化的跨导平台为>；6 V，在5 GHz时，OIP3/P-DC的线性度系数达到创纪录的15.9分贝，与传统平面器件相比，三阶互调功率降低了400倍。该架构还具有30 GHz的卓越性能，OIP3/P-DC为>；=8.2 db，最小噪声系数为2.2 db。该器件在可扩展的硅衬底上展示，为GaN低噪声放大器(LNA)在电信系统中的应用铺平了道路，并且也可移植到其他材料系统中。
Transistors are the backbone of any electronic and telecommunication system but all known transistors are intrinsically nonlinear introducing signal distortion. Here, we demonstrate a novel transistor with the best linearity achieved to date, attained by sequential turn-on of multiple channels composed of a planar top-gate and several trigate Fin field-effect transistors (FETs), using AlGaN/GaN structures. A highly linearized transconductance plateau of >6 V resulted in a record linearity figure of merit OIP3/P-DC of 15.9 dB at 5 GHz and a reduced third-order intermodulation power by 400x in reference to a conventional planar device. The proposed architecture also features an exceptional performance at 30 GHz with an OIP3/P-DC of >= 8.2 dB and a minimum noise figure of 2.2 dB. The device demonstrated on a scalable Si substrate paves the way for GaN low noise amplifiers (LNAs) to be utilized in telecommunication systems, and is also translatable to other material systems.