Structure analysis of the Ga-stabilized GaAs(001)-c(8×2) surface at high temperatures
Structure analysis of the Ga-stabilized GaAs(001)-c(8×2) surface at high temperatures
复制标题
Ga稳定GaAs(001)-c(8×2)表面高温结构分析
DOI：
10.1103/physrevb.65.233311
复制
发表时间：
2002
影响因子：
3.7
通讯作者：
M. Ozeki
中科院分区：
文献类型：
--
作者：
A. Ohtake;S. Tsukamoto;M. Pristovsek;N. Koguchi;M. Ozeki
用反射高能电子衍射（RHEED）的摇摆曲线分析方法研究了Ga稳定的$\mathrm{GaAs}（001）\ensuremath{-}c（8\ifmmode\texttimes\fi {}2）$表面的结构. c（8\ifmmode\times\else\texttimes\fi{}2）$结构在高于600 \ifmmode^\circ\else\textdegree\fi{}C的温度下出现，但在较低温度下相对于$（2\ifmmode\times\else\texttimes\fi{}6）/（3\ifmmode\times\else\texttimes\fi{}6）$结构的变化不稳定。我们的RHEED高温摇摆曲线分析表明，$c（8\ifmmode\times\else\texttimes\fi{}2）$表面的结构与Kumpf等人最近提出的结构基本相同。86，3586（2001）]。我们发现，在高温下，表面原子的配置是局部波动，而不干扰$c（8\ifmmode\times\else\texttimes\fi{}2）$周期性。
The structure of the Ga-stabilized $\mathrm{GaAs}(001)\ensuremath{-}c(8\ifmmode\times\else\texttimes\fi{}2)$ surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The $c(8\ifmmode\times\else\texttimes\fi{}2)$ structure emerges at temperatures higher than 600 \ifmmode^\circ\else\textdegree\fi{}C, but is unstable with respect to the change to the $(2\ifmmode\times\else\texttimes\fi{}6)/(3\ifmmode\times\else\texttimes\fi{}6)$ structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the $c(8\ifmmode\times\else\texttimes\fi{}2)$ surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the $c(8\ifmmode\times\else\texttimes\fi{}2)$ periodicity.