CoPtCr-SiO2/Ru垂直磁気記録媒体のSiO2組成と粒の孤立化
CoPtCr-SiO2/Ru垂直磁気記録媒体のSiO2組成と粒の孤立化
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CoPtCr-SiO2/Ru垂直磁记录介质的SiO2成分和晶粒隔离
DOI：
10.3379/jmsjmag.29.231
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发表时间：
2005
影响因子：
--
通讯作者：
慶久 中村
中科院分区：
文献类型：
--
作者：
忠昭 及川;武仁 島津;祐樹 稲葉;功 渡辺;基 青井;裕明 村岡;慶久 中村
讨论了CoPtCr-SiO_2/Ru垂直记录介质中晶粒隔离的增强与SiO_2含量、Ru种子层晶粒尺寸的关系。通过减去热搅动效应获得的剩磁矫顽力的值，H 0，随着SiO2含量的增加而显著增加，最高可达1011原子%，表明CoPtCr的晶粒隔离增强。TEM图像显示，一个单一的CoPtCr晶粒生长在Ru晶粒在此SiO2含量区域，和实验结果表明，Ru种子层的晶粒尺寸起着主导作用，在确定CoPtCr层的晶粒尺寸。然而，SiO2含量的进一步增加超过11原子%导致在Ru晶粒上生长多个CoPtCr晶粒，导致H 0的降低。多个CoPtCr晶粒的形成是显着的大Ru晶粒，这表明在膜沉积过程中的SiO2含量的增加的结果，SiO2的扩散长度（迁移率）的显着减少。Ru种子层需要减小晶粒尺寸和改善晶粒尺寸均匀性以增强CoPtCr SiO2垂直记录介质中的晶粒隔离。
Enhancement of grain isolation in CoPtCr-SiO2/Ru perpendicular recording media is discussed in relation to SiO2 the content and grain size of the Ru seed layer. The value of the remanence coercivity obtained by subtracting the thermal agitation effect, H0, increases significantly with increasing SiO2 content up to ∼ 11 at%, indicating enhancement of the grain isolation of CoPtCr. TEM images revealed that a single CoPtCr grain grows on a Ru grain in this SiO2 content region, and experimental results showed that the grain size of the Ru seed layer plays a dominant role in determining the grain size of CoPtCr layer. However, a further increase in SiO2 content beyond 11 at% results in a growth of multiple CoPtCr grains on a Ru grain, leading to a decrease in H0. The formation of the multiple CoPtCr grains was remarkable on large Ru grains, suggesting a significant reduction of the diffusion length (mobility) of SiO2 during film deposition as a result of the increase in SiO2 content. Both a grain size reduction and an improvement in grain size homogeneity are required for a Ru seed layer to enhance the grain isolation in CoPtCr SiO2 perpendicular recording media.