Asymmetries in photoconductive properties of donor and acceptor impurities in silicon
Asymmetries in photoconductive properties of donor and acceptor impurities in silicon
复制标题
硅中施主和受主杂质光电导特性的不对称性
DOI：
10.1063/1.333341
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发表时间：
1984
影响因子：
3.2
通讯作者：
N. Sclar
中科院分区：
文献类型：
--
作者：
N. Sclar
在光谱响应中观察到的非对称性，光电离截面和重组系数是硅和受体杂质之间的杂质结合能量的函数，这些不对称是由氢有效的质量理论所预测的。基于供体杂质的红外检测器的给定峰值响应。与非线性电荷筛效应相关的不对称效应，使电荷筛选比硅的受体更有效。用位置筛选电势。
Asymmetries observed in the spectral response, photoionization cross sections, and recombination coefficients as a function of impurity binding energy between donor and acceptor impurities in silicon are presented. These asymmetries, which are not predicted by the hydrogenic effective mass theory, permit higher operational temperatures for a given peak wavelength response for infrared detectors based on donor impurities. The photoconductive asymmetries can be correlated with recently calculated asymmetries associated with nonlinear charge‐screening effects which make charge screening more effective for point‐charge donors than for acceptors in silicon. To more fully account for the photoconductive asymmetries, impurity potentials more realistic than point charges are needed, including the accurate variation of dielectric screening of the potential with position.