Annealing effect on the structural, mechanical and electrical properties of titanium-doped diamond-like carbon films
Annealing effect on the structural, mechanical and electrical properties of titanium-doped diamond-like carbon films
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DOI：
10.1016/j.tsf.2009.09.096
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发表时间：
2009-12-31
期刊：
影响因子：
2.1
通讯作者：
Shih, Han C.
中科院分区：
文献类型：
--
作者：
Lin, Yu-Hung;Lin, Hong-Da;Shih, Han C.
Ti含量为1.1原子%的钛掺杂类金刚石碳（Ti掺杂DLC）膜的硅衬底上合成的过程中，涉及过滤阴极真空电弧（FCVA）和金属蒸气真空电弧（MeVVA）系统。在这项研究中，退火温度对所得薄膜的微观结构，表面粗糙度，硬度和电阻率的影响进行了评估。的拉曼光谱显示，石墨化的程度的Ti掺杂的DLC薄膜从25到600摄氏度增加和膜的微观结构被转换为纳米结晶石墨结构。所得膜在退火过程之后保持光滑表面。Ti掺杂的DLC膜的硬度随着退火温度增加到400摄氏度而增加，因为诱导的缺陷和原子间键在退火过程之后被修复。但随着温度的升高，由于纳米晶石墨畴数量和尺寸的增加，硬度降低。由于薄膜的石墨化程度增加，Ti掺杂的DLC薄膜的电阻率从0.038 Ω cm降低到0.006 Ω cm。(C)2009 Elsevier B.V.保留所有权利。
Titanium-doped diamond-like carbon (Ti-doped DLC) films with a Ti content of 1.1 at.% were synthesized on a Si substrate by a process that involves filtered cathodic vacuum arc (FCVA) and metal vapor vacuum arc (MeVVA) systems. The effect of annealing temperature on the microstructure, surface roughness, hardness and electrical resistivity of the resulting films was evaluated in this study. The Raman spectra revealed that the degree of graphitization of the Ti-doped DLC thin films was increased from 25 to 600 degrees C and the microstructure of the films is converted to a nano-crystalline graphite structure. The resulting films maintain a smooth surface after the annealing process. The hardness of the Ti-doped DLC films increases as the annealing temperature increases up to 400 degrees C because the induced defects and the inter-atomic bonds are repaired after the annealing process. But the hardness decreases at the higher temperature due to the increase of number and size of the nano-crystal line graphitic domains. Since the degree of graphitization of the thin films increases, the electrical resistivity of the Ti-doped DLC thin films decreases from 0.038 to 0.006 Omega cm. (C) 2009 Elsevier B.V. All rights reserved.