High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures
High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures
复制标题
基于范德华垂直MoS2/MoSe2异质结构的高性能光电器件
DOI：
10.1007/s12274-020-2743-7
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发表时间：
2020-04-01
期刊：
影响因子：
9.9
通讯作者：
Pan, Anlian
中科院分区：
文献类型：
--
作者：
Li, Fang;Xu, Boyi;Pan, Anlian
单层MoS 2是一种具有大激子结合能的直接带隙半导体材料，是一种很有希望的可用于半导体光电器件的材料。然而，单层MoS 2的光电性能受到其生长质量和载流子迁移率的严重限制。本文报道了垂直叠层MoS_2/MoSe_2异质结的直接气相生长及其光电器件，并进一步讨论了器件性能提高的机理。光学和高分辨原子表征表明，异质结界面是高质量的，没有原子合金化。电输运测量表明，异质结晶体管表现出28.5cm（2）/（V中心点s）的高迁移率和10（7）的高开/关比。光电性能测试表明，该异质结器件的光电响应率为36 A/W，探测率为4.8 × 10（11）Jones，这主要得益于界面诱导的内建电场和载流子相关的库仑屏蔽效应。这项工作表明，二维（2D）半导体异质结构的建设在修改2D材料的光电器件性能中起着重要的作用。
Monolayer MoS2 is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS2 is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of vertically-stacked MoS2/MoSe2 heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm(2)/(V center dot s) and a high on/off ratio of 10(7). The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 x 10(11) Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.