Local transport in a disorder-stabilized correlated insulating phase
Local transport in a disorder-stabilized correlated insulating phase
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无序稳定相关绝缘相中的局部传输
DOI：
10.1103/physrevb.72.241311
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发表时间：
2005
影响因子：
3.7
通讯作者：
D. Ritchie
中科院分区：
文献类型：
--
作者：
M. Baenninger;A. Ghosh;M. Pepper;H. Beere;I. Farrer;P. Atkinson;D. Ritchie
我们报道了在有限的背景无序窗口中低电子密度下二维GaAs/AlGaAs异质结构中相关绝缘相的实验实现。这已经在介观长度尺度上实现，其中绝缘相的特征在于通用跳跃传输机制。在这种制度下的运输是由平均电子分离，独立的拓扑结构的背景障碍。我们已经讨论了钉扎电子固体基态的观察，稳定的无序和库仑相互作用的相互作用。
We report the experimental realization of a correlated insulating phase in two-dimensional (2D) GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hopping transport mechanism. Transport in this regime is determined only by the average electron separation, independent of the topology of background disorder. We have discussed this observation in terms of a pinned electron solid ground state, stabilized by the mutual interplay of disorder and Coulomb interaction.