Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
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绝缘体上单晶锗岛分子束外延生长砷化镓层
DOI：
10.1143/jjap.23.l308
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发表时间：
1984
影响因子：
1.5
通讯作者：
S. Namba
中科院分区：
文献类型：
--
作者：
M. Takai;T. Tanigawa;T. Minamisono;K. Gamo;S. Namba
砷化镓 (GaAs) 层已通过分子束外延成功地在单晶锗 (Ge) 岛上生长，并通过区域熔化与 SiO2 覆盖层在热氧化硅晶片上进行再结晶。在单晶Ge岛上生长的GaAs层显示出光滑的表面，没有任何晶界，而在有晶界的Ge岛上和SiO2上生长的GaAs层则具有晶界。单晶Ge岛上的GaAs层发出光致发光，其强度几乎与块体Ge晶体上的GaAs层相当。
Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.