Bridgman growth of Sr3NbGa3Si2O14 single crystal
Bridgman growth of Sr3NbGa3Si2O14 single crystal
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DOI：
10.1016/j.materresbull.2005.09.031
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发表时间：
2006-04
影响因子：
5.4
通讯作者：
Anhua Wu;Jiayue Xu;B. Lu;Xianjun Wu;Xinhua Li;Guoxing Qian
中科院分区：
文献类型：
--
作者：
Anhua Wu;Jiayue Xu;B. Lu;Xianjun Wu;Xinhua Li;Guoxing Qian
首次采用垂直布里奇曼法生长出新型硅酸锰矿结构压电单晶Sr3NbGa3Si2O14(SNGS)。以4N纯SrCO3、Nb2O5、SiO2和Ga2O3的混合物在1200℃下烧结16h合成SNGS结晶粉末。使用<001>取向的Ø10mm×35mm的La3Ga5SiO14(LGS)晶体作为晶种。直径为 25 毫米、长度为 40 毫米的 SNGS 晶体已从其化学计量熔体中生长出来。测量了透射率光谱，发现SNGS晶体在400-1000nm波长范围内的透射率大于80%。
A new langasite structure piezoelectric single crystal Sr3NbGa3Si2O14(SNGS) had been grown by the vertical Bridgman method for the first time. SNGS crystalline powder was synthesized as the starting material by sintering the mixture of 4N pure SrCO3, Nb2O5, SiO2and Ga2O3at 1200°C for 16h. 〈001〉-oriented La3Ga5SiO14(LGS) crystal of Ø10mm×35mm was used as seed. A SNGS crystal with 25mm in diameter and 40mm in length has been grown from its stoichiometric melt. The transmittance spectra were measured and the transmittance of SNGS crystal was found to be greater than 80% in wavelength of 400–1000nm.