Direct epitaxial growth of semiconducting β-FeSi2 thin films on Si(111) by facing targets direct-current sputtering
Direct epitaxial growth of semiconducting β-FeSi2 thin films on Si(111) by facing targets direct-current sputtering
复制标题
面向靶材直流溅射在Si(111)上直接外延生长半导体β-FeSi2薄膜
DOI：
10.1063/1.2200153
复制
发表时间：
2006
影响因子：
4
通讯作者：
K. Nagayama
中科院分区：
文献类型：
--
作者：
T. Yoshitake;Y. Inokuchi;A. Yuri;K. Nagayama
在Si（111）衬底上，采用对靶直流溅射（FTDCS）方法，在衬底温度为600° C（比常规退火温度低至少200°C）的条件下外延生长了β-FeSi 2半导体薄膜。沉积的薄膜具有光滑的表面，表面粗糙度均方根为1.47nm。由实验估算的直接和间接光学带隙与单晶体的带隙基本一致。电导率的温度依赖性意味着Co掺入从FeSi 2目标与纯度为3 N。采用FTDCS方法，由于低Ar气压溅射，基片上没有等离子体和中性原子的扩散，可以有效地直接外延生长表面光滑的β-FeSi 2薄膜。
Semiconducting β-FeSi2 thin films were epitaxially as-grown on Si(111) substrates at a substrate temperature of 600°C, which is at least 200°C lower than ordinary annealing temperatures, by using the facing targets direct-current sputtering (FTDCS) method using an FeSi2 target without annealing. The deposited film exhibits a smooth surface with a surface roughness root mean square of 1.47nm. The direct and indirect optical band gaps estimated from the experiment were in agreement with those of the single crystalline bulk. Temperature dependence of the electrical conductivity implied Co incorporation from the FeSi2 targets with a purity of 3N. The FTDCS method, in which a substrate is free of plasma and energetic neutral atoms diffused into the substrate owing to low Ar pressure sputtering, is effective for the direct epitaxial growth of β-FeSi2 thin films with smooth surfaces.