Multiferroic tunnel junctions
Multiferroic tunnel junctions
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DOI：
10.1007/s11467-012-0266-8
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发表时间：
2012-08
影响因子：
7.5
通讯作者：
Yuewei Yin;M. Raju;Weijin Hu;X. Weng;K. Zou;Jun Zhu;Xiaoguang Li;Zhidong Zhang;Qi Li
中科院分区：
文献类型：
--
作者：
Yuewei Yin;M. Raju;Weijin Hu;X. Weng;K. Zou;Jun Zhu;Xiaoguang Li;Zhidong Zhang;Qi Li
具有铁电屏障的磁性隧道结，通常被称为多铁性隧道结，最近被提出以显示新的功能和新的器件概念。其中一个值得注意的预测是，两个电荷极化态与平行和反平行磁态的结合可以使其成为一个四电阻态器件。我们最近利用扫描探针技术研究了铁电隧道效应，并在三层规划结中以铁磁性la0.7 ca0.3 mno3和la0.7 sr0.3 mno3作为电极和铁电（Ba, Sr） tio3作为势垒的多铁隧道结。我们发现非常薄的（Ba, Sr） tio3薄膜可以在室温下保持铁电性。多铁性隧道结显示出预测的四种电阻状态，并可在室温下工作。
Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3and La0.7Sr0.3MnO3as the electrodes and ferroelectric (Ba, Sr)TiO3as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.