Geometrical Frustration of B-H Bonds in Layered Hydrogen Borides Accessible by Soft Chemistry
Geometrical Frustration of B-H Bonds in Layered Hydrogen Borides Accessible by Soft Chemistry
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DOI：
10.1016/j.chempr.2019.11.006
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发表时间：
2020-02-13
期刊：
影响因子：
23.5
通讯作者：
Kondo, Takahiro
中科院分区：
文献类型：
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作者：
Tominaka, Satoshi;Ishibiki, Ryota;Kondo, Takahiro
由于硼的缺电子特性，硼氢化物具有多种结构。最近，我们报道了通过软化学路线合成层状硼化氢。在这里，我们确定在层状硼化氢的原子排列通过使用对分布函数：材料主要由一个波纹状的B网络装饰的三个中心，两个电子的B-H-B桥键以及普通的两个中心，两个电子的B-H末端键。该材料是局部有序的，但通过衍射法是无定形的。这种差异可以通过位于B-H-B桥键中两个等价B原子之一上的末端B-H键的位置引起的几何阻挫来解释。这种材料是导电的（低于10摄氏度时为0.13 S cm（-1）），而不是离子导电的，其B-H-B键通过分子吸附而断裂;这种动态化学性质源于受抑结构，并导致独特的硼化氢功能。
Hydrogen borides adopt a variety of structures because of the electron-deficient character of boron. Recently, we reported the synthesis of a layered hydrogen boride via a soft chemical route. Here, we ascertain the atomic arrangements in the layered hydrogen boride by using pair-distribution functions: the material dominantly consists of a corrugated B network decorated with three-center, two-electron B-H-B bridging bonds as well as ordinary two-center, two-electron B-H terminal bonds. The material is locally ordered but amorphous by diffractometry. This discrepancy can be accounted for by geometrical frustration caused by the positions of terminal B-H bonds located on one of two equivalent B atoms in the B-H-B bridging bonds. This material is electrically conductive (0.13 S cm(-1) below 10 degrees C) rather than ion conductive, and its B-H-B bonds are cleaved by the adsorption of molecules; this dynamic chemical nature originates from the frustrated structure and leads to unique hydrogen boride functionalities.