Enhancement of superconductivity and suppression of charge-density wave in As-doped CsV3Sb5

Enhancement of superconductivity and suppression of charge-density wave in As-doped CsV3Sb5
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DOI:
10.1103/physrevmaterials.6.124803
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发表时间:
2022-12-13
影响因子:
3.4
通讯作者:
Cao, Guang-Han
Cao, Guang-Han
中科院分区:
材料科学3区
文献类型:
--
作者:
Liu, Yi;Liu, Chang -Chao;Cao, Guang-Han

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我们通过 X 射线衍射、电阻率、磁化率和比热的测量研究了新发现的 Kagome 超导体 CsV3Sb5 中的 As 掺杂效应。我们的结果表明,用 As 部分取代 Sb 会导致 c 晶格收缩,从而有效地在系统中施加化学压力。自熔剂法生长的单晶中砷原子的溶解度约为2.3%。在As掺杂单晶CsV3(Sb0.977As0.023)(5)中,电荷密度波(CDW)转变温度T-CDW从94 K抑制到83 K,超导转变温度Tc从2.5 K提高到3.6 K。此外,残余电阻率显着降低,沿c轴磁场的磁阻增大 减少了近一个数量级,表明砷掺杂引起了显着的无序散射。反常霍尔效应(AHE)仅在 T-CDW 下方观察到,表明 CDW 和 AHE 之间的密切关系。我们发现As掺杂对T-c和T-CDW的影响基本上相当于0.2 GPa下的静水压力影响。
We have investigated the As-doping effect in the newly discovered kagome superconductor CsV3Sb5 via measurements of x-ray diffraction, electrical resistivity, magnetic susceptibility, and specific heat. Our results show that partial substitution of Sb with As leads to shrinkage of the c lattice, which effectively applies a chemical pressure in the system. The solubility of As atoms is about 2.3% for single crystals grown by the self-flux method. In the As-doped single crystal CsV3(Sb0.977As0.023)(5), the charge-density-wave (CDW) transition temperature T-CDW is suppressed from 94 to 83 K, and the superconducting transition temperature Tc is enhanced from 2.5 to 3.6 K. Furthermore, the residual resistivity ratio is significantly reduced, and the magnetoresistance with magnetic field along the c axis decreases by nearly one order of magnitude, indicating substantial disorder scattering induced by the As doping. The anomalous Hall effect (AHE) is only observed below T-CDW, indicating the intimate relationship between CDW and AHE. We found that the As-doping effect on T-c and T-CDW is basically equivalent to the hydrostatic pressure effect at 0.2 GPa.