Cu2SnS3 thin-film solar cells fabricated by sulfurization from NaF/Cu/Sn stacked precursor
Cu2SnS3 thin-film solar cells fabricated by sulfurization from NaF/Cu/Sn stacked precursor
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DOI：
10.7567/apex.8.042303
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发表时间：
2015-04
影响因子：
2.3
通讯作者：
M. Nakashima;J. Fujimoto;T. Yamaguchi;M. Izaki
中科院分区：
文献类型：
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作者：
M. Nakashima;J. Fujimoto;T. Yamaguchi;M. Izaki
以层叠的NaF/Cu/Sn前驱体为原料，在硫/锡混合气氛中，依次蒸发锡、铜和氟化钠制备了Cu2SnS3薄膜。NaF摩尔比改变为(x=0至0.12)。从X射线衍射谱和拉曼光谱可以看出，Cu2SnS3薄膜具有单斜晶系结构。随着NaF/Cu摩尔比的增加，Cu2SnS3薄膜的晶粒度减小。由量子效率谱测得Cu2SnS3薄膜的带隙能分别为0.93和1.02 eV。X=0.075的电池性能最好，伏安系数为283 mV，电流密度为37.3 mA/cm~2，电流密度为0.439，η为4.63%。
Cu2SnS3 thin films were prepared by crystallization in a sulfur/tin mixing atmosphere from stacked NaF/Cu/Sn precursors deposited by the sequential evaporation of Sn, Cu elements, and NaF. The NaF mole ratio was changed at (x = 0 to 0.12). From X-ray diffraction patterns and Raman spectra, the Cu2SnS3 thin films were considered to have a monoclinic structure. The grain size of the Cu2SnS3 thin films decreased with increasing NaF/Cu mole ratio. The band-gap energies of the Cu2SnS3 thin films determined from quantum efficiency spectra were 0.93 and 1.02 eV. The solar cell with x = 0.075 demonstrated the best performance, namely, Voc = 283 mV, Isc = 37.3 mA/cm2, FF = 0.439, and η = 4.63%.