Measurement of the Properties of GaN Layers Using Terahertz Time-Domain Spectroscopic Ellipsometry
Measurement of the Properties of GaN Layers Using Terahertz Time-Domain Spectroscopic Ellipsometry
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使用太赫兹时域光谱椭圆光度法测量 GaN 层的特性
DOI：
10.1002/pssb.201600767
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
T. Araki and Y. Nanishi
中科院分区：
文献类型：
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作者：
K. Tachi;S. Asagami;T. Fujii;T. Nagashima;T. Iwamoto;Y. Sato;N. Morita;R. Sugie;S. Kamiyama;T. Araki and Y. Nanishi
使用太赫兹时域光谱椭圆偏振仪（THz-TDSE）评估n型GaN晶片和外延层的电学性质。通过使用Drude模型拟合样品的反射光谱来确定电学性质，例如载流子密度和迁移率。通过THz-TDSE测量的GaN的性质与通过常规霍尔方法获得的性质一致。对于蓝宝石衬底上的GaN外延层，通过THz-TDSE获得厚度，并与其他测量进行比较。THz‐TDSE已被证明是一种非破坏性和无接触地评估n型GaN材料电性能的合适技术。
The electrical properties of an n‐type GaN wafer and epitaxial layer were evaluated using terahertz time‐domain spectroscopic ellipsometry (THz‐TDSE). The electrical properties, such as carrier density and mobility, were determined by fitting the reflective spectra of the sample using the Drude model. The measured properties of the GaN by THz‐TDSE are consistent with those obtained by conventional Hall methods. For the GaN epitaxial layer on sapphire substrates, the thickness was obtained by THz‐TDSE and compared with other measurements. THz‐TDSE has shown to be a suitable technique for evaluating the electrical properties of n‐type GaN materials non‐destructively and without contacts.