Anisotropic magnetoresistance in Fe/MgO/Fe tunnel junctions
Anisotropic magnetoresistance in Fe/MgO/Fe tunnel junctions
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DOI：
10.1088/0953-8984/20/15/155208
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发表时间：
2008-03
期刊：
影响因子：
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通讯作者：
M. N. Khan;J. Henk;P. Bruno
中科院分区：
文献类型：
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作者：
M. N. Khan;J. Henk;P. Bruno
Fe/MgO/Fe磁性隧道结的弹道电导显著依赖于引线中的磁化方向，如通过相对论第一性原理电子结构和输运计算所研究的。平行排列的铅磁化相对于界面从面内到垂直取向的旋转，即隧道各向异性磁阻（TAMR），使零偏压电导增加约30%。这种效应来源于界面处的Rashba自旋-轨道相互作用和共振隧穿。自旋-轨道诱导的带隙在铅的各向异性磁电阻没有显着的影响。隧道磁阻效应（TMR），即电导对引线磁化之间的相互角度的依赖关系，也得到了解决。
The ballistic conductance of Fe/MgO/Fe magnetic tunnel junctions depends significantly on the direction of the magnetization in the leads, as is investigated by relativistic first-principles electronic structure and transport calculations. The rotation of the parallel aligned lead magnetizations from in-plane to perpendicular orientation with respect to the interfaces, that is tunnel anisotropic magnetoresistance (TAMR), increases the zero-bias conductance by about 30%. The effect originates from both the Rashba spin–orbit interaction at the interfaces and from resonant tunneling. Spin–orbit induced band gaps in the leads show no considerable effect on the anisotropic magnetoresistance. The tunnel magnetoresistance (TMR), i.e. the dependence of the conductance on the mutual angle between the lead magnetizations, is also addressed.