Status and future of high-power light-emitting diodes for solid-state lighting
Status and future of high-power light-emitting diodes for solid-state lighting
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DOI：
10.1109/jdt.2007.895339
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发表时间：
2007-06-01
影响因子：
--
通讯作者：
Craford, M. George
中科院分区：
文献类型：
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作者：
Krames, Michael R.;Shchekin, Oleg B.;Craford, M. George
介绍了III-V族化合物半导体可见光谱发光二极管（LED）的研究现状和发展前景。光提取技术进行审查和提取效率进行量化的60%+（AlGaInP）和类似的80%（InGaN）国家的最先进的设备制度。磷光体为基础的白色LED的概念进行审查和最近的性能进行了讨论，表明高功率白色LED现在接近100流明/瓦政权。讨论了采用多个磷光体用于“暖”白色色温（类似于3000-4000 K）和高显色性（CRI > 80）的器件，其提供对于许多照明应用至关重要的性质。芯片设计、封装和高电流性能的最新发展导致非常高的亮度器件（类似于在1 × 1 mm（2）芯片中在1 A正向电流下的50 Mcd/m（2）白色），其适合于应用于汽车正向照明。考虑到内部量子效率的进一步提高，对未来LED性能水平的预测，到目前为止，内部量子效率落后于InGaN LED的光提取效率的成就。
Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and similar to 80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (similar to 3000-4000 K) and high color rendering (CRI > 80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (similar to 50 Mcd/m(2) white at 1 A forward current in 1 x 1 mm(2) chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs.