Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode
Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode
复制标题
DOI：
10.1063/1.3063044
复制
发表时间：
2008-12
影响因子：
4
通讯作者：
H. Fang;L. Sang;L. B. Zhao;Shengli Qi;Y. Zhang;X. L. Yang;Z. Yang;G. Zhang
中科院分区：
文献类型：
--
作者：
H. Fang;L. Sang;L. B. Zhao;Shengli Qi;Y. Zhang;X. L. Yang;Z. Yang;G. Zhang
制备了一种带有应变调节InGaN中间层的无磷GaN基白光发光二极管。利用阴极发光、高分辨率 X 射线衍射的不对称倒易空间映射和扫描电子显微镜研究了应变调节白色发光特性的起源。电致发光光谱的黄色和蓝色分量分别归因于器件表面倒金字塔形凹坑中的高铟核和相邻的贫铟区域。这些凹坑存在于 InGaN 夹层应变弛豫过程引起的位错末端。
A kind of phosphor-free GaN based white light-emitting diode was fabricated with a strain adjusting InGaN interlayer. The origin of the strain adjusted white luminescent properties was studied with cathodoluminescence, asymmetrically reciprocal space mapping with high resolution x-ray diffraction, and scanning electron microscopy. The yellow and blue components of the electroluminescence spectrum were attributed to the high indium core and the adjacent indium depleted region in the inverted pyramidal pits on the device surface, respectively. These pits existed at the end of the dislocations induced by the strain relaxation process of the InGaN interlayer.