Heteroepitaxial growth of the intrinsic vacancy semiconductor Al2Se3 on Si(111):: Initial structure and morphology
Heteroepitaxial growth of the intrinsic vacancy semiconductor Al2Se3 on Si(111):: Initial structure and morphology
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DOI：
10.1103/physrevb.78.075321
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发表时间：
2008-08-01
影响因子：
3.7
通讯作者：
Ohuchi, Fumio S.
中科院分区：
文献类型：
--
作者：
Lu, Chih-Yuan;Adams, Jonathan A.;Ohuchi, Fumio S.
利用扫描隧道显微镜和高分辨率光电子能谱研究了硒化铝在 Si(I H) 上异质外延生长过程中纳米结构形态和局部化学环境的演变。尽管在第一个 AlSe 双层沉积过程中，原子和电子结构与 GaSe 非常相似，但随后的生长却截然不同，导致交替的 Al-Se-Al-Se 堆叠顺序与缺陷纤锌矿结构 Al(2)Se(3) 一致。第一个双层在第二层成核之前在给定的平台上完成，但后续层在第二层完成之前成核。结构良好的 Al(x)Se(y) 岛表面光滑且由 Se 原子终止；然后，铝在附加的硒之前粘附，导致具有富含铝的无序表面的完整岛屿变得更加粗糙。在入射通量中使用额外的 Al 进行生长不会产生层状 AlSe，只会引起薄膜形态的细微差别。
The evolution of nanostructure morphology and local chemical environment during heteroepitaxial growth of aluminum selenide on Si(I H) was investigated with scanning tunneling microscopy and high-resolution photoemission spectroscopy. Despite the strong similarity to GaSe in atomic and electronic structure during deposition of the first AlSe bilayer, subsequent growth is quite different-resulting in an alternating Al-Se-Al-Se stacking sequence consistent with defected-wurtzite-structure Al(2)Se(3). The first bilayer is completed on a given terrace before the second layer nucleates, but subsequent layers nucleate before completion of the second layer. The surfaces of well-formed Al(x)Se(y) islands are smooth and terminated by Se atoms; Al then sticks before additional Se, resulting in rougher in complete islands with Al-rich disordered surfaces. Growth with extra Al in the incident flux does not result in layered AlSe and induces only subtle differences in film morphology.