Current on‐off operation of graphene transistor with dual gates and He ion irradiated channel
Current on‐off operation of graphene transistor with dual gates and He ion irradiated channel
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双栅极He离子辐照沟道石墨烯晶体管的电流开关操作
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
N. Yokoyama
中科院分区：
文献类型：
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作者：
S. Nakaharai;T. Iijima;S. Ogawa;Song;K. Tsukagoshi;Shintaro Sato;N. Yokoyama
我们展示了一种新型的双栅极晶体管的电流开关操作，该晶体管具有He离子辐照的石墨烯沟道，在该沟道中形成了缺陷诱导的输运能隙。通过对顶栅的独立偏置来控制栅控p-i-n结的能带结构，从而实现晶体管的工作。在250K的温度下，器件的最大电流开关比达到了近四个数量级。还证明了晶体管的极性可以通过调整其中一个双栅的栅极偏置来在单极和双极之间改变，正如器件运行模型所预期的那样。(2013Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
We demonstrate the current on-off operation in a novel dual-gated transistor with a He ion irradiated graphene channel in which defect-induced transport gap is formed. The transistor operation was performed by controlling the band configuration of gate-controlled p-i-n junction by independent biasing of top gates. The maximum current on-off ratio of nearly four orders of magnitude was obtained at a temperature of 250 K in the proposed device structure. It was also demonstrated that the transistor polarity can be changed between unipolar and ambipolar just by adjusting the gate bias of one of the dual gates, as expected from the device operation model. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)