Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
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DOI：
10.1088/1674-1056/18/7/067
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发表时间：
2009-07
影响因子：
1.7
通讯作者：
Deng Xiaochuan;Feng Zhen;Zhang Bo;L. Zhaoji;Li Liang;Pan Hong-Shu
中科院分区：
文献类型：
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作者：
Deng Xiaochuan;Feng Zhen;Zhang Bo;L. Zhaoji;Li Liang;Pan Hong-Shu
本文报道了栅周长为5 mm的多凹栅4 H-SiC MESFFET（金属半导体场效应晶体管）的制作和特性。在栅极端子下的多凹进区域被应用以提高栅极-漏极击穿电压，并且通过将电流路径远离器件的表面来减轻捕获引起的不稳定性。实验结果表明，采用多凹槽栅结构的多指5 mm栅周SiC MESFETs的微波输出功率密度、功率增益和功率附加效率分别比采用相同工艺制作的传统器件提高了29%、1.1dB和7%。
This paper reports that multi-recessed gate 4H-SiC MESFETs (metal semiconductor filed effect transistors) with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density, power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.