Cryogenic probe station for on-wafer characterization of electrical devices
Cryogenic probe station for on-wafer characterization of electrical devices
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DOI：
10.1063/1.3700213
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发表时间：
2012-04-01
影响因子：
1.6
通讯作者：
Reevesc, Rodrigo
中科院分区：
文献类型：
--
作者：
Russell, Damon;Cleary, Kieran;Reevesc, Rodrigo
提出了一种适用于低温下集成电路电气特性表征的探针台。独特的设计将室温下低温恒温器内的所有移动部件结合在一起，大大简化了设计并允许自动分步和重复测试。该系统可以在一定温度下表征直径达 100 毫米的晶圆
A probe station, suitable for the electrical characterization of integrated circuits at cryogenic temperatures is presented. The unique design incorporates all moving components inside the cryostat at room temperature, greatly simplifying the design and allowing automated step and repeat testing. The system can characterize wafers up to 100 mm in diameter, at temperatures