Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing
Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing
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DOI：
10.1143/jjap.45.6544
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发表时间：
2006-08
影响因子：
1.5
通讯作者：
R. Nötzel;S. Anantathanasarn;R. Veldhoven;F. Otten;T. Eijkemans;A. Trampert;B. Satpati;Y. Barbarin;E. Bente;Y. Oei;T. D. Vries;E. Geluk;B. Smalbrugge;M. Smit;J. H. Wolter
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文献类型：
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作者：
R. Nötzel;S. Anantathanasarn;R. Veldhoven;F. Otten;T. Eijkemans;A. Trampert;B. Satpati;Y. Barbarin;E. Bente;Y. Oei;T. D. Vries;E. Geluk;B. Smalbrugge;M. Smit;J. H. Wolter
采用金属有机物气相外延（MOVPE）技术在InP（100）衬底上生长了嵌入晶格匹配InGaAsP中的波长可调谐InAs量子点。通过降低QD生长温度和V-III流比来抑制导致非常大的QD尺寸和发射波长的As/P交换。As/P交换，量子点的大小和发射波长，然后可重复地控制的厚度的GaAs [0-2单层（ML）]的量子点下面的夹层。亚单层GaAs覆盖导致从量子点到量子破折号的形状转变为低V-III流比。它是降低生长温度和V-III流动比与插入大于1 ML厚度的GaAs夹层的组合，其允许在室温下在1.55 μm波长范围内调谐QD的发射波长。温度依赖的光致发光（PL）的测量显示了优异的光学性能的量子点。广泛堆叠的量子点层再现相同的PL发射，以增加有效体积，而紧密堆叠的量子点层揭示了系统的PL红移和线宽减少，由于垂直电子耦合，这是证明的事实，即分裂侧PL的线性偏振从面内变化到各向同性。有源区具有堆叠QD层的脊波导激光二极管在室温下以连续波模式显示出阈值电流，这是在1.55 µm波长范围内工作的InAs/InP QD激光器所实现的最低阈值电流之一。
Wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP(100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange, which causes a QD size and an emission wavelength that are very large, is suppressed by decreasing the QD growth temperature and V–III flow ratio. As/P exchange, QD size and emission wavelength are then reproducibly controlled by the thickness of ultrathin [0–2 monolayers (ML)] GaAs interlayers underneath the QDs. Submonolayer GaAs coverages result in a shape transition from QDs to quantum dashes for a low V–III flow ratio. It is the combination of reduced growth temperature and V–III flow ratio with the insertion of GaAs interlayers of greater than 1 ML thickness which allows the tuning of the emission wavelength of QDs at room temperature in the 1.55 µm wavelength range. Temperature-dependent photoluminescence (PL) measurements reveal the excellent optical properties of the QDs. Widely stacked QD layers are reproduced with identical PL emission to increase the active volume while closely stacked QD layers reveal a systematic PL redshift and linewidth reduction due to vertical electronic coupling, which is proven by the fact that the linear polarization of the cleaved-side PL changes from in-plane to isotropic. Ridge-waveguide laser diodes with stacked QD layers for their active regions exhibit threshold currents at room temperature in continuous-wave mode that are among the lowest threshold currents achieved for InAs/InP QD lasers operating in the 1.55 µm wavelength range.