Tunnel devices are not yet manufacturable
Tunnel devices are not yet manufacturable
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隧道设备尚未可制造
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
M. Carr
中科院分区：
文献类型：
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作者：
V. A. Wilkinson;M. Kelly;M. Carr
尽管许多显着的原型设备的性能报告使用半导体多层，包括薄隧道势垒，它从来没有建立的设备是能够常规制造。参考最简单的可能的隧道器件结构，一个单一的厚AlAs势垒内的GaAs（所谓的ASPAT微波探测器二极管）的非对称掺杂环境中，我们在这里显示，还不可能设计，生长或合格的半导体多层具有足够的准确性，精度，均匀性或再现性，将允许逆向工程，制造的先决条件，进行信心。我们描述的改进设计，增长和资格，将需要实现可制造性，并评论实现这一目标的可行性。我们的结论薄隧道势垒器件的概念适用于任何器件的想法，寻求利用半导体中的介观现象更是一个。
In spite of many remarkable prototype device performances reported using semiconductor multilayers that incorporate thin tunnel barriers, it has never been established that the devices are capable of routine manufacture. With reference to the simplest possible tunnel device structure, a single thick AlAs barrier within an asymmetric doping environment in GaAs (the so-called ASPAT microwave detector diode), we show here that is not yet possible to design, grow or qualify the semiconductor multilayers with sufficient accuracy, precision, uniformity or reproducibility that would allow reverse engineering, a prerequisite for manufacture, to be undertaken with confidence. We describe the improvements in design, growth and qualification that will be required to achieve manufacturability, and comment on the feasibility of attaining this goal. Our conclusions for thin tunnel barrier device concepts apply a fortiori to any device ideas that seek to exploit mesoscopic phenomena in semiconductors.