Inversion electrons on narrow-band-gap semiconductors in crossed electric and magnetic fields.
Inversion electrons on narrow-band-gap semiconductors in crossed electric and magnetic fields.
复制标题
交叉电场和磁场中窄带隙半导体上的反转电子。
DOI：
10.1103/physrevb.33.6916
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
Merkt
中科院分区：
文献类型：
--
作者：
Zawadzki;Klahn;Merkt
本文从理论上研究了在平行于界面的外磁场（交叉场组态）作用下窄带隙半导体反型层中的电子。一个三能级模型的\ensuremath{\kappa}\ensuremath{\cdot}P理论被用来描述电子在外部电场和磁场中，考虑到在InSb型半导体的能带结构的主要特点：一个小的能隙和一个强大的自旋轨道相互作用。电势被认为是在一个三角形井的形式和界面的存在是占适当的边界条件的波函数。从磁表面水平（消失电场）到纯电子子带（消失磁场）的均匀电场和磁场的任意强度的本征能量的解析描述。在InSb中的电子回旋共振的实验数据中存在的交叉领域（批量限制）的理论描述和解释使用之间的类比电子在窄隙半导体和相对论电子在真空中。本文讨论了横向磁场对金属氧化物半导体结构中子带间共振能量的影响。整个强调现有的和可能的实验所获得的理论结果的关系。
Electrons in inversion layers of narrow-band-gap semiconductors in the presence of an external magnetic field parallel to the interface (crossed-field configuration) are considered theoretically. A three-level model of the \ensuremath{\kappa}\ensuremath{\cdot}P theory is used to describe electrons in external electric and magnetic fields, taking into account the main features of the band structure in InSb-type semiconductors: a small energy gap and a strong spin-orbit interaction. The electric potential is taken to be in the form of a triangular well and the presence of the interface is accounted for by appropriate boundary conditions for the wave function. An analytic description of the eigenenergies is obtained for arbitrary intensities of the homogeneous electric and magnetic fields, from magnetic surface levels (vanishing electric field) to purely electric subbands (vanishing magnetic field). Experimental data on electron cyclotron resonance in InSb in the presence of crossed fields (the bulk limit) are theoretically described and interpreted using an analogy between electrons in narrow-gap semiconductors and relativistic electrons in vacuum. The influence of a transverse magnetic field on the energies of intersubband resonances in metal-oxide-semiconductor structures is discussed. The relation of the theoretical results obtained to existing and possible experiments is emphasized throughout.