Post-Fabrication Trimming of Silicon Ring Resonators via Integrated Annealing
Post-Fabrication Trimming of Silicon Ring Resonators via Integrated Annealing
复制标题
通过集成退火对硅环谐振器进行制造后修整
DOI：
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发表时间：
2019
影响因子：
2.6
通讯作者：
A. Knights
中科院分区：
文献类型：
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作者：
D. Hagan;Benjamin Torres;A. Knights
我们报告了通过使用集成微加热器对晶格缺陷进行退火来对绝缘体上硅微环谐振器进行制造后调整。通过惰性MeV硼离子注入引入缺陷，剂量范围<inline-formula><tex-math notation="LaTeX">为3 乘以10^{10}$</tex-math></inline-formula>至<inline-formula><tex-math notation="LaTeX">$3 乘以10^{13}$</tex-math></inline-formula>cm<sup>-2</sup>。对于所述剂量范围，离子注入导致范围从20至1200 pm的稳定红移。注入后退火产生随后的蓝移范围从380到800 μ m，依赖于注入剂量，表明通过去除退火引起的缺陷的硅晶格的部分恢复。此外，证据表明，与修改的微环，即使没有事先离子注入步骤的共振蓝移。与在这封信中所描述的方法，我们证明了精确的微调的四环滤波器，使谐振分离50 GHz，尽管制造的环具有随机的谐振分离造成的制造差异。
We report post-fabrication trimming of silicon-on-insulator micro-ring resonators via annealing of lattice defects using integrated micro-heaters. Defects are introduced via an inert MeV boron ion implantation at doses ranging from <inline-formula> <tex-math notation="LaTeX">$3 imes 10^{10}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$3 imes 10^{13}$ </tex-math></inline-formula> cm<sup>−2</sup>. Ion implantation results in a stable red-shift ranging from 20 to 1200 pm, for the stated dose range. Post-implantation annealing produces a subsequent blue-shift ranging from 380 to 800 pm, dependent on the implantation dose, indicating partial recovery of the silicon lattice through removal of the implantation-induced defects. Moreover, evidence is shown for a resonance blue-shift associated with modification of the micro-ring, even without a prior ion implantation step. With the method described in this letter, we demonstrate precise trimming of a four-ring filter such that the resonances are separated by 50 GHz, despite the as-fabricated rings having a random resonance separation resulting from fabrication variances.