Spin-polarized tunneling in room-temperature mesoscopic spin valves
Spin-polarized tunneling in room-temperature mesoscopic spin valves
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DOI：
10.1063/1.1830685
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发表时间：
2004-12
影响因子：
4
通讯作者：
S. Valenzuela;M. Tinkham
中科院分区：
文献类型：
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作者：
S. Valenzuela;M. Tinkham
我们使用金属介观自旋阀结构研究了 4.2K 和室温下自旋注入和检测的优化，该结构在铁磁电极（CoFe 或 NiFe）和中心金属导体（Al）之间具有隧道界面。我们通过在沉积铁磁电极之前改变铝膜的 O2 暴露量来研究势垒透明度对隧道电子自旋极化的影响。当结的电阻从 100Ωμm2 增加到 700Ωμm2 时，观察到极化从 ∼10% 增加到 16%（4.2K 时为 25%）。在 4.2K 时获得高达 2.5Ω 的自旋跨阻。
We study optimization of spin injection and detection both at 4.2K and at room temperature using a metallic mesoscopic spin valve structure with tunneling interfaces between the ferromagnetic electrodes (CoFe or NiFe) and the central metallic conductor (Al). We investigate the influence of the barrier transparency on the spin polarization of the tunneling electrons by varying the O2 exposure of the Al film before depositing the ferromagnetic electrodes. An increase of the polarization from ∼10% to 16% (25% at 4.2K) is observed as the resistance of the junction is increased from 100to700Ωμm2. A spin transresistance as high as 2.5Ω is obtained at 4.2K.