3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100)
3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100)
复制标题
DOI：
10.1103/physrevlett.91.176101
复制
发表时间：
2003-10-24
影响因子：
8.6
通讯作者：
Williams, RS
中科院分区：
文献类型：
--
作者：
Malachias, A;Kycia, S;Williams, RS
利用锗K边缘的掠入射异常x射线散射数据，获得了在600°c的Si（001）上生长的名义纯锗圆顶的三维成分图。数据是根据一堆浓度横向变化的层来分析的。结果表明，这些圆顶包含一个富含硅的核，并被富含锗的壳所覆盖，并且由选择性蚀刻实验独立支持。在生长过程中，衬底的Si合金加入了Ge，从而部分地缓解了穹顶内部和穹顶下的应力。
Three-dimensional composition maps of nominally pure Ge domes grown on Si(001) at 600degreesC were obtained from grazing incidence anomalous x-ray scattering data at the Ge K edge. The data were analyzed in terms of a stack of layers with laterally varying concentration. The results demonstrated that the domes contained a Si-rich core covered by a Ge-rich shell and were independently supported by selective etch experiments. The composition profile resulted from substrate Si alloying into the Ge during growth to partially relax the stress in and under the domes.