Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride
Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride
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DOI：
10.7567/apex.11.091001
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发表时间：
2018-09-01
影响因子：
2.3
通讯作者：
Mishima, Tomoyoshi
中科院分区：
文献类型：
--
作者：
Horikiri, Fumimasa;Ohta, Hiroshi;Mishima, Tomoyoshi
利用光电化学(PEC)刻蚀技术在生长在n-GaN衬底上的GaN-on-GaN外延层上制备了深槽结构。用于蚀刻掩模的50 nm厚的钛层即使在蚀刻到30微米的深度后也没有被去除。侧向蚀刻的宽度小于1微米，并且具有高精度。一条3.3微米宽、PEC刻蚀深度为24.3微米的沟槽的纵横比(深度/宽度)为7.3。这些结果表明，PEC刻蚀技术在制作垂直GaN器件的深槽方面具有很好的潜力。(C)2018年日本应用物理学会
Photo-electrochemical (PEC) etching was used to fabricate deep trench structures in a GaN-on-GaN epilayer grown on n-GaN substrates. A 50-nm-thick layer of Ti used for an etching mask was not removed even after etching to a depth of > 30 mu m. The width of the side etching was less than 1 mu m with high accuracy. The aspect ratio (depth/width) of a 3.3-mu m-wide trench with a PEC etching depth of 24.3 mu m was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices. (C) 2018 The Japan Society of Applied Physics