Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators
Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators
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AlGaN/GaN MEMS 谐振器中的可切换压电换能
DOI：
10.1109/transducers.2013.6627304
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
D. Weinstein
中科院分区：
文献类型：
--
作者：
Laura C. Popa;D. Weinstein
提出了一种新的AlGaN/GaN体声波谐振器压电转换开关机制。在AlGaN中，在顶部肖特基电极和作为第二电极的2D电子气（2DEG）之间形成压电换能器。在关断状态下，可以通过向顶部电极施加负偏压来耗尽该2DEG，从而抑制转导并减少电容性负载。在240 MHz ~ 3.5GHz频率范围内实现了AlGaN/GaN可开关谐振器，在空气中的频率品质因数积可达1.7×1012。在具有无源压电和HEMT感测的两种器件中示出了切换，在关断状态下具有> 19 dB的抑制。
This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas (2DEG) as a second electrode. In the off state, this 2DEG can be depleted by applying a negative bias to the top electrode, suppressing transduction and reducing capacitive loading. Switchable AlGaN/GaN resonators are demonstrated from 240MHz to 3.5GHz with frequency-quality factor products up to 1.7×1012 in air. Switching is shown in both devices with passive piezoelectric and HEMT sensing, with >19dB suppression in the off state.