Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition
Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition
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DOI：
10.1021/nl404818z
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发表时间：
2014-03-01
期刊：
影响因子：
10.8
通讯作者：
Kagan, Cherie R.
中科院分区：
文献类型：
--
作者：
Oh, Soong Ju;Berry, Nathaniel E.;Kagan, Cherie R.
我们报道了一种简单的，基于溶液的，合成后的胶体原子层沉积(PS-CALD)过程，以逐步改变器件中集成的硫化物纳米晶(NC)薄膜的表面化学计量比，从而确定其电子性质。我们发现，与结构、光学和电子不稳定的富含硫化物的NC表面不同，氯化铅处理创建了一个钝化良好的壳层，稳定了NCS。用硫化铅纳米薄膜的PS-CALD法，我们得到了接近4.5 cm(2)/(V S)的高电子场效应迁移率。
We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of similar to 4.5 cm(2)/(V s).