Transition of thermal rectification in silicon nanocones
Transition of thermal rectification in silicon nanocones
复制标题
硅纳米锥中热整流的转变
DOI:
10.1016/j.applthermaleng.2016.03.083
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发表时间:
2016
影响因子:
6.4
通讯作者:
Zhang Shengbai
中科院分区:
文献类型:
--
作者:
Zhang Zhongwei;Chen Yuanping;Xie Yuee;Zhang Shengbai
Current understanding of thermal rectification asserts that the rectification ratio (R), which measures the relative heat flux between two ends of a nanostructure, is determined by its geometric asymmetry. The higher the asymmetry, the higher theR. However, by using nonequilibrium molecular dynamics method we have calculated thermal transport in Si nanocones as an example, the results show that such an understanding may be incorrect andRmay not increase monotonically with geometric asymmetry. Rather,Rexhibits a sharp reverse when the vertex angle (θ) of the nanocone is approximately 90°. In other words, whenθ>90°,Rdecreases, rather than increasing. We show that this abnormal behavior is originated from a change in the thermal transport mechanism. At smallθs, phonon transport is dominated by localized modes, especially for transport from tip to bottom. At largeθs, however, these localized modes disappear, leading toRdecrease.