Nanomeshed Si nanomembranes
Nanomeshed Si nanomembranes
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DOI：
10.1038/s41528-019-0053-5
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发表时间：
2019-05
影响因子：
14.6
通讯作者：
Xun Han;Kyung Jin Seo;Yi Qiang;Zeping Li;S. Vinnikova;Yiding Zhong;Xuanyi Zhao;Peijie Hao;Shuodao Wang;Hui Fang
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文献类型：
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作者：
Xun Han;Kyung Jin Seo;Yi Qiang;Zeping Li;S. Vinnikova;Yiding Zhong;Xuanyi Zhao;Peijie Hao;Shuodao Wang;Hui Fang
可拉伸电子的主要挑战之一是实现高性能的可拉伸半导体。在这里，我们介绍了纳米网状半导体纳米膜的创新概念，它几乎可以被视为传统微电子布局的内在可拉伸性。通过将硅薄膜制成具有弹簧状纳米迹的均匀纳米网，我们证明了高电子迁移率为50 cm2/V·s，拉伸1000次后的一次性应变为25%，循环应变为14%的中等拉伸性，通过优化的纳米网设计可以进一步提高。一个简单的分析模型涵盖了分数材料和痕量侧壁表面，很好地预测了正常硅纳米网晶体管的输运特性，为未来的设计和优化提供了可能。除了在可拉伸电子领域的潜在应用之外，这种半导体纳米网概念为材料工程提供了一个新的平台，并有望产生一系列新的可拉伸无机材料，这些材料具有可调谐的电子和光电子特性，具有定制的纳米结构。
One of the main challenges in stretchable electronics is to achieve high-performance stretchable semiconductors. Here, we introduce an innovative concept of nanomeshed semiconductor nanomembrane which can be regarded almost as intrinsically stretchable to conventional microelectronic layouts. By making a silicon film into homogeneous nanomeshes with spring-like nano traces, we demonstrated a high electron mobility of 50 cm2/V·s, and moderate stretchability with a one-time strain of 25% and cyclic strain of 14% after stretching for 1000 cycles, further improvable with optimized nanomesh designs. A simple analytic model covering both fractional material and trace sidewall surfaces well predicted the transport properties of the normally on silicon nanomesh transistors, enabling future design and optimizations. Besides potential applications in stretchable electronics, this semiconductor nanomesh concept provides a new platform for materials engineering and is expected to yield a new family of stretchable inorganic materials having tunable electronic and optoelectronic properties with customized nanostructures.