Magnetoresistive effects in planar NiFe nanoconstrictions
Magnetoresistive effects in planar NiFe nanoconstrictions
复制标题
平面 NiFe 纳米收缩中的磁阻效应
DOI：
10.1063/1.1682831
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发表时间：
2004
影响因子：
3.2
通讯作者：
R. Gomez
中科院分区：
文献类型：
--
作者：
S. Florez;M. Dreyer;K. Schwab;C. Sánchez;R. Gomez
本文主要研究了宽度为15 nm的窄带Ni_(80)Fe_(20)纳米线的磁区壁阻。磁阻曲线的明显不同取决于收缩的大小。较宽的磁致伸缩主要由结构的各向异性磁阻决定，而窄于∼40 nm的磁致伸缩则表现出来自磁区壁的额外的显著贡献。这种影响是负面的，通常从1%到5%不等。
This study focuses on domain wall resistance in Ni_(80) Fe_(20) nanowires containing narrow constrictions down to 15 nm in width. Distinct differences in the magnetoresistance curves were found to depend on the constriction size. Wider constrictions are dominated by the overall anisotropic magnetoresistance of the structure, while constrictions narrower than ∼40 nm exhibit an additional distinct contribution from a domain wall. The effect is negative and typically varies from 1% to 5%.