Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM
Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM
复制标题
通过在 CBRAM 中引入与 BEOL 兼容的 TiN 势垒层来提高器件可靠性
DOI：
10.1109/led.2017.2746738
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发表时间：
2017-10-01
影响因子：
4.9
通讯作者：
Liu, Ming
中科院分区：
文献类型：
--
作者：
Cao, Rongrong;Liu, Sen;Liu, Ming
由纳米丝过度生长现象引起的负置位效应是导致导电桥随机存储器（CBRAM）复位失效的主要原因。CBRAM器件中的负置位行为会导致严重的可靠性问题，并已成为大规模生产的障碍。在这封信中，我们提出了一个后端线（BEOL）兼容的TiN阻挡层，以提高CBRAM器件的可靠性，通过消除纳米丝过生长现象和负SET行为。因此，可以将更高的复位电压施加到TiN阻挡层器件，以实现更完整的复位过程并获得更好的阻变性能。结果表明，单晶体管结构的Cu/HfO 2/TiN/Ru器件具有高可靠性、快开关速度、高电阻态均匀性、高耐久性、长保持时间和多级存储能力等优良的综合存储性能。
Negative-SET behavior, induced by nano-filament overgrowth phenomenon, takes major responsibility to the reset failure phenomenon in conductive bridge random access memory (CBRAM). The unexpected negative-SET behavior in CBRAM devices can result in serious reliability issues and has been an obstacle on the way to mass production. In this letter, we have proposed a back-end-of-line (BEOL) compatible TiN barrier layer to improve the device reliability in CBRAM devices by eliminating the nano-filament overgrowth phenomenon and negative-SET behavior. Thus, a higher reset voltage can be applied to the TiN barrier layer devices to achieve more complete reset process and obtain better resistive switching performance. The results show that the Cu/HfO2/TiN/Ru device with one transistor structure has excellent comprehensive memory properties, including high reliability, fast switching speed, high resistance state uniformity, high endurance, long retention, and multi-level storage ability.