Precision beam telescope based on SOI pixel sensor technology for electrons in the energy range of sub-GeV to GeV
Precision beam telescope based on SOI pixel sensor technology for electrons in the energy range of sub-GeV to GeV
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基于 SOI 像素传感器技术的精密光束望远镜，适用于亚 GeV 至 GeV 能量范围内的电子
DOI：
10.1093/ptep/ptac124
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
Ayaki Takeda
中科院分区：
文献类型：
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作者：
Hisanori Suzuki;Takumi Omori;Kazuhiko Hara;Hiroki Yamauchi;Miho Yamada;Toru Tsuboyama;Ayaki Takeda
我们研制了一套光束望远镜系统，包括五层厚度为300μm的INTPIX4NA单块像素传感器，每个像素大小为17μm方形。这些传感器是使用绝缘体上硅(SOI)技术制造的。在20V的偏置电压下实现了140-230的信噪比。跟踪系统使用200-822 MeV/c的正电子束进行了测试，并检查了各种跟踪方法，以优化在这些能量下可实现的空间精度。当传感器间距为32 mm时，822 MeV/正电子束流的最佳跟踪精度(包括传感器本身的精度)为11.04±0.10μm。将获得的精度结果与使用120GeV质子的类似系统获得的本征空间分辨率值相结合，用于估计GeV能量范围内电子的跟踪性能，对5GeV电子的跟踪精度为2.22μm。基于Geant4的仿真实验验证了该跟踪性能估计方法的有效性。开发的高精度跟踪器系统使我们能够绘制像素尺寸为(10μm)的传感器的详细性能图，因此将成为开发针对精确位置分辨率的设备的强大系统。
We developed a beam telescope system comprising five layers of 300 μm thick INTPIX4NA monolithic pixel sensors, each with a pixel size of 17 μm square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The signal-to-noise ratio of 140–230 is realized at a bias voltage of 20 V. The tracker system was tested using a positron beam of 200–822 MeV/c, and various tracking methods are examined to optimize the spatial precision achievable at these energies. The best tracking precision including the precision of the sensor under test itself is 11.04 ± 0.10 μm for 822 MeV/cpositrons for an equidistant sensor spacing of 32 mm. The achieved precision results combined with the intrinsic spatial resolution value obtained for a similar system using 120 GeV protons are used to estimate the tracking performance of electrons in the GeV energy range; a tracking precision of 2.22 μm is evaluated for 5 GeV electrons. The method to estimate the tracking performance is verified using a Geant4-based simulation. The developed high-precision tracker system enables us to map the detailed performance of sensors with pixel sizes of(10 μm) and will therefore be a powerful system for the development of devices targeting precision position resolutions.