Dopant-Free Planar n-i-p Perovskite Solar Cells with Steady-State Efficiencies Exceeding 18%
Dopant-Free Planar n-i-p Perovskite Solar Cells with Steady-State Efficiencies Exceeding 18%
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DOI：
10.1021/acsenergylett.7b00028
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发表时间：
2017-03-01
影响因子：
22
通讯作者：
Nicholas, Robin J.
中科院分区：
文献类型：
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作者：
Habisreutinger, Severin N.;Wenger, Bernard;Nicholas, Robin J.
在本文中，我们展示了一种平面n-i-p钙钛矿太阳能电池的设计，在没有任何电子掺杂的情况下，其稳态效率高达18.8%。在器件堆栈中，溶液处理的SnO2用作电子接受n型层。吸收层为混合有机a位阳离子和混合卤化物(FA(0.83)MA(0.17)Pb（I0.83Br0.17)(3)）的钙钛矿。空穴输运p型层是由聚合物包裹的单壁碳纳米管和未掺杂的螺旋- ometad构成的双层结构。我们证明，这种方法可以提供与传统掺杂的spiro-OMeTAD一样高甚至更高的稳态效率，为无掺杂钙钛矿太阳能电池的长期稳定性提供了一条至关重要的途径。
In this Letter, we demonstrate a planar n-i-p perovskite solar cell design with a steady-state efficiency of up to 18.8% in the absence of any electronic dopants. In the device stack, solution-processed SnO2 is used as an electron-accepting n-type layer. The absorber layer is a perovskite with both mixed organic A-site cations and mixed halides (FA(0.83)MA(0.17)Pb(I0.83Br0.17)(3)). The hole-transporting p-type layer is a double-layer structure of polymer-wrapped single-walled carbon nanotubes and undoped spiro-OMeTAD. We show that this approach can deliver steady-state efficiencies as high as and even higher than those of traditionally doped spiro-OMeTAD, providing a pathway for dopant-free perovskite solar cells crucial for long-term stability.[GRAPHICS]