Ultrasensitive‐hot‐electron microbolometer
Ultrasensitive‐hot‐electron microbolometer
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DOI：
10.1063/1.110237
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发表时间：
1993-11
影响因子：
4
通讯作者：
M. Nahum;J. Martinis
中科院分区：
文献类型：
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作者：
M. Nahum;J. Martinis
我们介绍了一种新型功率探测器的测量结果，它可以用作毫米和亚毫米辐射的超灵敏探测器。吸收元件由连接到超导电极的薄膜电阻条组成。该装置利用电子的Andreev反射和低温下的弱电子-声子耦合，在很小的输入功率（10 mK/fW）下产生较大的温升。电子的温升是通过一个隧道结来检测的，其中一部分金属条形成了正常的电极。在100 mK的工作温度下，我们测量到的电压响应率约为109 V/W，放大器限制电噪声等效功率为<s:1> 3×10−18 W Hz−1/2。如果红外辐射与天线或波导有效地耦合到吸收元件上，那么该探测器的灵敏度将比在相同温度下工作的最佳直接探测器至少好10倍。
We present measurements on a novel power detector which can be used as an ultrasensitive detector of millimeter and submillimeter radiation. The absorbing element consists of a thin film resistor strip which is connected to superconducting electrodes. This device exploits the Andreev reflection of electrons and the weak electron‐phonon coupling at low temperatures to produce a large temperature rise for a small input power (≊10 mK/fW). The temperature rise of the electrons is detected by a tunnel junction where part of the metal strip forms the normal electrode. We have measured a voltage responsivity of approximately 109 V/W and an amplifier‐limited electrical noise equivalent power ≊3×10−18 W Hz−1/2 at an operating temperature of 100 mK. If infrared radiation were efficiently coupled to the absorbing element with an antenna or a waveguide, then the sensitivity of this detector would be at least a factor of 10 better than the best available direct detector operating at the same temperature.